Gate Tunneling Current Calculation of Nanoscale MOSFETs with a Unified Quantum Correction SPICE Model

In this paper, an analytical quantum correction model for ultrathin oxide MOSFET devices is proposed. With this novel SPICE-compatible model, the gate tunneling current is precisely calculated without any complicated quantum mechanical models. The proposed model is optimized with respect to (i) the position of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. Comparing with the conventional approach to direct tunneling current calculation, the proposed model demonstrates good agreement with the quantum mechanical simulation. Make it more clearly that the quantum correction technique can be unified used in modeling the quantum confinement effects in gate tunneling current, gate to channel capacitance, and channel current. Our quantum correction model can accurately account quantum effects of nanoscale MOSFET and can directly be implemented into vary large scaled integration (VLSI) circuit simulation. Key-Words: Nanoscale MOSFET, Thin Oxide, Direct Tunneling, SPICE-compatible, Quantum Mechanical Effects, Quantum Correction, Schrödinger-Poisson, Modeling and Simulation, Circuit Simulation